MRF6S24140HS【PDF 5/12 页】IC MOSFET RF N-CHAN NI-880S

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2

RF Device Data

Freescale Semiconductor, Inc.

MRF6S24140HR3 MRF6S24140HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

IV

Table 4. Electrical Characteristics

(TA

=25?C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS

=68Vdc,VGS

=0Vdc)

IDSS

—

—

10

?Adc

Zero Gate Voltage Drain Leakage Current

(VDS

=28Vdc,VGS

=0Vdc)

IDSS

—

—

1

?Adc

Gate--Source Leakage Current

(VGS

=5Vdc,VDS

=0Vdc)

IGSS

—

—

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS

=10Vdc,ID

= 300

?Adc)

VGS(th)

1

2

3

Vdc

Gate Quiescent Voltage

(VDD

=28Vdc,ID

= 1300 mAdc, Measured in Functional Test)

VGS(Q)

2

2.8

4

Vdc

Drain--Source On--Voltage

(VGS

=10Vdc,ID

=3Adc)

VDS(on)

0.1

0.21

0.3

Vdc

Dynamic Characteristics

(1)

Reverse Transfer Capacitance

(VDS

=28Vdc?

30 mV(rms)ac @ 1 MHz, VGS

=0Vdc)

Crss

—

2

—

pF

Functional Tests

(In Freescale Test Fifxture, 50 ohm system) VDD

=28Vdc,IDQ

= 1300 mA, Pout

= 28 W Avg., f = 2390 MHz, 2--Carrier

W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @

?5 MHz Offset. IM3 measured in

3.84 MHz Bandwidth @

?10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

13

15.2

17

dB

Drain Efficiency

?D

23

25

—

%

Intermodulation Distortion

IM3

—

-- 3 7

-- 3 5

dBc

Adjacent Channel Power Ratio

ACPR

—

-- 4 0

-- 3 8

dBc

Input Return Loss

IRL

—

-- 1 5

—

dB

1. Part internally matched both on input and output.

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